Surface Reactivity of Single-Crystal Silicon in Atomic Layer Deposition Processes


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详细

A macromolecular concept of the structure of solids and induction constants are used to quantitatively assess the reactivity of hydroxyl groups on the surface of single-crystal matrices, as exemplified by silicon. The oxide layer on the surface of such matrices is shown to influence the reactivity of silanol groups in atomic layer deposition processes.

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Yu. Ezhovskii

St. Petersburg State Technological Institute (Technical University)

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Email: ezhovski1@mail.ru
俄罗斯联邦, Moskovskii pr. 26, St. Petersburg, 190013

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