Surface Reactivity of Single-Crystal Silicon in Atomic Layer Deposition Processes
- 作者: Ezhovskii Y.K.1
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隶属关系:
- St. Petersburg State Technological Institute (Technical University)
- 期: 卷 55, 编号 2 (2019)
- 页面: 101-105
- 栏目: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158634
- DOI: https://doi.org/10.1134/S0020168519020031
- ID: 158634
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详细
A macromolecular concept of the structure of solids and induction constants are used to quantitatively assess the reactivity of hydroxyl groups on the surface of single-crystal matrices, as exemplified by silicon. The oxide layer on the surface of such matrices is shown to influence the reactivity of silanol groups in atomic layer deposition processes.
作者简介
Yu. Ezhovskii
St. Petersburg State Technological Institute (Technical University)
编辑信件的主要联系方式.
Email: ezhovski1@mail.ru
俄罗斯联邦, Moskovskii pr. 26, St. Petersburg, 190013
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