Email this article Surface Reactivity of Single-Crystal Silicon in Atomic Layer Deposition Processes
- Authors: Ezhovskii Y.K.1
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Affiliations:
- St. Petersburg State Technological Institute (Technical University)
- Issue: Vol 55, No 2 (2019)
- Pages: 101-105
- Section: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158634
- DOI: https://doi.org/10.1134/S0020168519020031
- ID: 158634
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Abstract
A macromolecular concept of the structure of solids and induction constants are used to quantitatively assess the reactivity of hydroxyl groups on the surface of single-crystal matrices, as exemplified by silicon. The oxide layer on the surface of such matrices is shown to influence the reactivity of silanol groups in atomic layer deposition processes.
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About the authors
Yu. K. Ezhovskii
St. Petersburg State Technological Institute (Technical University)
Author for correspondence.
Email: ezhovski1@mail.ru
Russian Federation, Moskovskii pr. 26, St. Petersburg, 190013
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