Formation of “negative” silicon whiskers


Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

An approach has been proposed for producing “negative” whiskers in Si wafers which is based on the thermal migration of silicon–metal (Si + M) melt droplets in the field of a transverse temperature gradient. We have obtained regular systems of negative whiskers in the form of through holes in Si {111} wafers. It has been shown that the thermal migration of Si + M melt droplets is driven by the difference between the chemical potentials of Si in the liquid and crystalline phases, which arises from the difference in curvature between the liquid/vapor and solid/liquid interfaces and leads to Si dissolution and desorption.

Sobre autores

V. Nebol’sin

Voronezh State Technical University

Autor responsável pela correspondência
Email: vcmsao13@mail.ru
Rússia, Moskovskii pr. 14, Voronezh, 394026

A. Dunaev

Voronezh State Technical University

Email: vcmsao13@mail.ru
Rússia, Moskovskii pr. 14, Voronezh, 394026

A. Vorob’ev

Voronezh State Technical University

Email: vcmsao13@mail.ru
Rússia, Moskovskii pr. 14, Voronezh, 394026

A. Samofalova

Voronezh State Technical University

Email: vcmsao13@mail.ru
Rússia, Moskovskii pr. 14, Voronezh, 394026

V. Zenin

Voronezh State Technical University

Email: vcmsao13@mail.ru
Rússia, Moskovskii pr. 14, Voronezh, 394026

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML

Declaração de direitos autorais © Pleiades Publishing, Ltd., 2017