Formation of “negative” silicon whiskers
- 作者: Nebol’sin V.A.1, Dunaev A.I.1, Vorob’ev A.Y.1, Samofalova A.S.1, Zenin V.V.1
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隶属关系:
- Voronezh State Technical University
- 期: 卷 53, 编号 8 (2017)
- 页面: 775-780
- 栏目: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158264
- DOI: https://doi.org/10.1134/S002016851708012X
- ID: 158264
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详细
An approach has been proposed for producing “negative” whiskers in Si wafers which is based on the thermal migration of silicon–metal (Si + M) melt droplets in the field of a transverse temperature gradient. We have obtained regular systems of negative whiskers in the form of through holes in Si {111} wafers. It has been shown that the thermal migration of Si + M melt droplets is driven by the difference between the chemical potentials of Si in the liquid and crystalline phases, which arises from the difference in curvature between the liquid/vapor and solid/liquid interfaces and leads to Si dissolution and desorption.
作者简介
V. Nebol’sin
Voronezh State Technical University
编辑信件的主要联系方式.
Email: vcmsao13@mail.ru
俄罗斯联邦, Moskovskii pr. 14, Voronezh, 394026
A. Dunaev
Voronezh State Technical University
Email: vcmsao13@mail.ru
俄罗斯联邦, Moskovskii pr. 14, Voronezh, 394026
A. Vorob’ev
Voronezh State Technical University
Email: vcmsao13@mail.ru
俄罗斯联邦, Moskovskii pr. 14, Voronezh, 394026
A. Samofalova
Voronezh State Technical University
Email: vcmsao13@mail.ru
俄罗斯联邦, Moskovskii pr. 14, Voronezh, 394026
V. Zenin
Voronezh State Technical University
Email: vcmsao13@mail.ru
俄罗斯联邦, Moskovskii pr. 14, Voronezh, 394026
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