Formation of “negative” silicon whiskers


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An approach has been proposed for producing “negative” whiskers in Si wafers which is based on the thermal migration of silicon–metal (Si + M) melt droplets in the field of a transverse temperature gradient. We have obtained regular systems of negative whiskers in the form of through holes in Si {111} wafers. It has been shown that the thermal migration of Si + M melt droplets is driven by the difference between the chemical potentials of Si in the liquid and crystalline phases, which arises from the difference in curvature between the liquid/vapor and solid/liquid interfaces and leads to Si dissolution and desorption.

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V. Nebol’sin

Voronezh State Technical University

编辑信件的主要联系方式.
Email: vcmsao13@mail.ru
俄罗斯联邦, Moskovskii pr. 14, Voronezh, 394026

A. Dunaev

Voronezh State Technical University

Email: vcmsao13@mail.ru
俄罗斯联邦, Moskovskii pr. 14, Voronezh, 394026

A. Vorob’ev

Voronezh State Technical University

Email: vcmsao13@mail.ru
俄罗斯联邦, Moskovskii pr. 14, Voronezh, 394026

A. Samofalova

Voronezh State Technical University

Email: vcmsao13@mail.ru
俄罗斯联邦, Moskovskii pr. 14, Voronezh, 394026

V. Zenin

Voronezh State Technical University

Email: vcmsao13@mail.ru
俄罗斯联邦, Moskovskii pr. 14, Voronezh, 394026

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