Fabrication of ZnSe/InP Heterojunctions on Flat and Shaped Surfaces of InP Laser Crystals
- Авторы: Vasil’ev M.G.1, Vasil’ev A.M.1, Izotov A.D.1, Marenkin S.F.1, Pashkova O.N.1, Shelyakin A.A.1
-
Учреждения:
- Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
- Выпуск: Том 55, № 9 (2019)
- Страницы: 903-907
- Раздел: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158759
- DOI: https://doi.org/10.1134/S0020168519090188
- ID: 158759
Цитировать
Аннотация
We have studied the growth of zinc selenide layers on flat and shaped indium phosphide surfaces. The growth rate of zinc selenide has been shown to depend on substrate orientation. It has been shown that the present results can be useful in designing mesa stripe structures for quantum electronic instruments. We have fabricated mesa stripe laser diodes operating on the absorption band of methane and suitable for producing fiber-optic signal transmission systems.
Ключевые слова
Об авторах
M. Vasil’ev
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Автор, ответственный за переписку.
Email: mgvas@igic.ras.ru
Россия, Leninskii pr. 31, Moscow, 119991
A. Vasil’ev
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Email: mgvas@igic.ras.ru
Россия, Leninskii pr. 31, Moscow, 119991
A. Izotov
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Email: mgvas@igic.ras.ru
Россия, Leninskii pr. 31, Moscow, 119991
S. Marenkin
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Email: mgvas@igic.ras.ru
Россия, Leninskii pr. 31, Moscow, 119991
O. Pashkova
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Email: mgvas@igic.ras.ru
Россия, Leninskii pr. 31, Moscow, 119991
A. Shelyakin
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
Email: mgvas@igic.ras.ru
Россия, Leninskii pr. 31, Moscow, 119991
Дополнительные файлы
