Growth of Gallium Nitride Micro- and Nanocrystallites on the Surface of Gallium Arsenide


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As a result of heterosegregation, we have obtained a gallium nitride phase, including oriented micro- and nanocrystallites, on the surface of gallium arsenide. The mechanism underlying the growth of crystallites of the surface phase has been analyzed.

Sobre autores

Yu. Tomashpolsky

Karpov Institute of Physical Chemistry (Russian Federation State Scientific Center)

Autor responsável pela correspondência
Email: tomashpols@yandex.ru
Rússia, ul. Vorontsovo pole 10, Moscow, 105064

V. Matyuk

Karpov Institute of Physical Chemistry (Russian Federation State Scientific Center)

Email: tomashpols@yandex.ru
Rússia, ul. Vorontsovo pole 10, Moscow, 105064

N. Sadovskaya

Karpov Institute of Physical Chemistry (Russian Federation State Scientific Center)

Email: tomashpols@yandex.ru
Rússia, ul. Vorontsovo pole 10, Moscow, 105064

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