Email this article Impurity Distribution in Multicrystalline Silicon Growth
- Authors: Nepomnyashchikh A.I.1, Presnyakov R.V.1
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Affiliations:
- Vinogradov Institute of Geochemistry, Siberian Branch
- Issue: Vol 54, No 4 (2018)
- Pages: 315-318
- Section: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158430
- DOI: https://doi.org/10.1134/S0020168518040106
- ID: 158430
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Abstract
This paper presents experimental data on the growth of multicrystalline silicon with tailored electrical properties using starting silicon of purity better than 99.999 at %. Our calculations demonstrate that the effective distribution coefficients of Fe-group impurities decrease with increasing impurity concentration in the starting charge.
About the authors
A. I. Nepomnyashchikh
Vinogradov Institute of Geochemistry, Siberian Branch
Email: ropr@igc.ork.ru
Russian Federation, ul. Favorskogo 1a, Irkutsk, 664033
R. V. Presnyakov
Vinogradov Institute of Geochemistry, Siberian Branch
Author for correspondence.
Email: ropr@igc.ork.ru
Russian Federation, ul. Favorskogo 1a, Irkutsk, 664033
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