Enviar artigo por via de e-mail Impurity Distribution in Multicrystalline Silicon Growth
- Autores: Nepomnyashchikh A.I.1, Presnyakov R.V.1
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Afiliações:
- Vinogradov Institute of Geochemistry, Siberian Branch
- Edição: Volume 54, Nº 4 (2018)
- Páginas: 315-318
- Seção: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158430
- DOI: https://doi.org/10.1134/S0020168518040106
- ID: 158430
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Resumo
This paper presents experimental data on the growth of multicrystalline silicon with tailored electrical properties using starting silicon of purity better than 99.999 at %. Our calculations demonstrate that the effective distribution coefficients of Fe-group impurities decrease with increasing impurity concentration in the starting charge.
Sobre autores
A. Nepomnyashchikh
Vinogradov Institute of Geochemistry, Siberian Branch
Email: ropr@igc.ork.ru
Rússia, ul. Favorskogo 1a, Irkutsk, 664033
R. Presnyakov
Vinogradov Institute of Geochemistry, Siberian Branch
Autor responsável pela correspondência
Email: ropr@igc.ork.ru
Rússia, ul. Favorskogo 1a, Irkutsk, 664033
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