Effect of Annealing Atmosphere on Chromium Diffusion in CVD ZnSe


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This paper examines the effect of high-temperature doping conditions on Cr2+ diffusion in polycrystalline zinc selenide. The activation energy for the diffusion process is determined in the temperature range 900–1100°C for annealing in an argon atmosphere and zinc vapor, and the mechanism responsible for the enhanced chromium diffusion in the case of doping in zinc vapor is discussed.

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S. Rodin

Devyatykh Institute of Chemistry of High-Purity Substances

编辑信件的主要联系方式.
Email: rodin@ihps.nnov.ru
俄罗斯联邦, ul. Tropinina 49, Nizhny Novgorod, 603950

E. Gavrishchuk

Devyatykh Institute of Chemistry of High-Purity Substances; Lobachevsky State University (National Research University)

Email: rodin@ihps.nnov.ru
俄罗斯联邦, ul. Tropinina 49, Nizhny Novgorod, 603950; pr. Gagarina 23a, Nizhny Novgorod, 603950

V. Ikonnikov

Devyatykh Institute of Chemistry of High-Purity Substances

Email: rodin@ihps.nnov.ru
俄罗斯联邦, ul. Tropinina 49, Nizhny Novgorod, 603950

D. Savin

Devyatykh Institute of Chemistry of High-Purity Substances

Email: rodin@ihps.nnov.ru
俄罗斯联邦, ul. Tropinina 49, Nizhny Novgorod, 603950

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