Effect of Annealing Atmosphere on Chromium Diffusion in CVD ZnSe
- Authors: Rodin S.A.1, Gavrishchuk E.M.1,2, Ikonnikov V.B.1, Savin D.V.1
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Affiliations:
- Devyatykh Institute of Chemistry of High-Purity Substances
- Lobachevsky State University (National Research University)
- Issue: Vol 54, No 1 (2018)
- Pages: 21-25
- Section: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158385
- DOI: https://doi.org/10.1134/S0020168518010132
- ID: 158385
Cite item
Abstract
This paper examines the effect of high-temperature doping conditions on Cr2+ diffusion in polycrystalline zinc selenide. The activation energy for the diffusion process is determined in the temperature range 900–1100°C for annealing in an argon atmosphere and zinc vapor, and the mechanism responsible for the enhanced chromium diffusion in the case of doping in zinc vapor is discussed.
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About the authors
S. A. Rodin
Devyatykh Institute of Chemistry of High-Purity Substances
Author for correspondence.
Email: rodin@ihps.nnov.ru
Russian Federation, ul. Tropinina 49, Nizhny Novgorod, 603950
E. M. Gavrishchuk
Devyatykh Institute of Chemistry of High-Purity Substances; Lobachevsky State University (National Research University)
Email: rodin@ihps.nnov.ru
Russian Federation, ul. Tropinina 49, Nizhny Novgorod, 603950; pr. Gagarina 23a, Nizhny Novgorod, 603950
V. B. Ikonnikov
Devyatykh Institute of Chemistry of High-Purity Substances
Email: rodin@ihps.nnov.ru
Russian Federation, ul. Tropinina 49, Nizhny Novgorod, 603950
D. V. Savin
Devyatykh Institute of Chemistry of High-Purity Substances
Email: rodin@ihps.nnov.ru
Russian Federation, ul. Tropinina 49, Nizhny Novgorod, 603950
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