Effect of Annealing Atmosphere on Chromium Diffusion in CVD ZnSe
- Autores: Rodin S.A.1, Gavrishchuk E.M.1,2, Ikonnikov V.B.1, Savin D.V.1
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Afiliações:
- Devyatykh Institute of Chemistry of High-Purity Substances
- Lobachevsky State University (National Research University)
- Edição: Volume 54, Nº 1 (2018)
- Páginas: 21-25
- Seção: Article
- URL: https://journals.rcsi.science/0020-1685/article/view/158385
- DOI: https://doi.org/10.1134/S0020168518010132
- ID: 158385
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Resumo
This paper examines the effect of high-temperature doping conditions on Cr2+ diffusion in polycrystalline zinc selenide. The activation energy for the diffusion process is determined in the temperature range 900–1100°C for annealing in an argon atmosphere and zinc vapor, and the mechanism responsible for the enhanced chromium diffusion in the case of doping in zinc vapor is discussed.
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Sobre autores
S. Rodin
Devyatykh Institute of Chemistry of High-Purity Substances
Autor responsável pela correspondência
Email: rodin@ihps.nnov.ru
Rússia, ul. Tropinina 49, Nizhny Novgorod, 603950
E. Gavrishchuk
Devyatykh Institute of Chemistry of High-Purity Substances; Lobachevsky State University (National Research University)
Email: rodin@ihps.nnov.ru
Rússia, ul. Tropinina 49, Nizhny Novgorod, 603950; pr. Gagarina 23a, Nizhny Novgorod, 603950
V. Ikonnikov
Devyatykh Institute of Chemistry of High-Purity Substances
Email: rodin@ihps.nnov.ru
Rússia, ul. Tropinina 49, Nizhny Novgorod, 603950
D. Savin
Devyatykh Institute of Chemistry of High-Purity Substances
Email: rodin@ihps.nnov.ru
Rússia, ul. Tropinina 49, Nizhny Novgorod, 603950
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