A model for calculating the composition of GaAs  x  P 1– x   solid solutions under metalorganic vapor phase epitaxy conditions

A. D. Maksimov; V. Yu. Eistrikh-Geller; A. A. Marmalyuk; M. A. Ladugin; T. A. Bagaev; P. V. Gorlachuk; I. V. Yarotskaya

doi:10.1134/S0020168517040124

A model for calculating the composition of GaAs_xP_1–x solid solutions under metalorganic vapor phase epitaxy conditions

Authors: Maksimov A.D.¹, Eistrikh-Geller V.Y.¹, Marmalyuk A.A.², Ladugin M.A.², Bagaev T.A.², Gorlachuk P.V.², Yarotskaya I.V.²
Affiliations:
1. Institute of Fine Chemical Technologies
2. AO Stel’makh Polyus Research Institute
Issue: Vol 53, No 4 (2017)
Pages: 369-375
Section: Article
URL: https://journals.rcsi.science/0020-1685/article/view/158198
DOI: https://doi.org/10.1134/S0020168517040124
ID: 158198

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Abstract

A model is proposed for calculating the composition of GaAs_xP_1–x solid solutions, based on the iterative determination of the equilibrium partial pressures of the pyrolysis products of the starting reagents, followed by calculation of the composition of the solid solution in an adsorption–desorption model. The proposed model ensures good agreement between calculation results and experimental data.

Keywords

Metalorganic vapor phase epitaxy, GaAsP, thermodynamics, composition calculation, semiconductor lasers

About the authors

A. D. Maksimov

Institute of Fine Chemical Technologies

Author for correspondence.
Email: admaximov@mitht.ru
Russian Federation, pr. Vernadskogo 86, Moscow, 119571

V. Yu. Eistrikh-Geller

Institute of Fine Chemical Technologies

Email: admaximov@mitht.ru
Russian Federation, pr. Vernadskogo 86, Moscow, 119571