A model for calculating the composition of GaAs  x  P 1– x   solid solutions under metalorganic vapor phase epitaxy conditions

A. D. Maksimov; V. Yu. Eistrikh-Geller; A. A. Marmalyuk; M. A. Ladugin; T. A. Bagaev; P. V. Gorlachuk; I. V. Yarotskaya

doi:10.1134/S0020168517040124

A model for calculating the composition of GaAs_xP_1–x solid solutions under metalorganic vapor phase epitaxy conditions

作者: Maksimov A.D.¹, Eistrikh-Geller V.Y.¹, Marmalyuk A.A.², Ladugin M.A.², Bagaev T.A.², Gorlachuk P.V.², Yarotskaya I.V.²
隶属关系:
1. Institute of Fine Chemical Technologies
2. AO Stel’makh Polyus Research Institute
期: 卷 53, 编号 4 (2017)
页面: 369-375
栏目: Article
URL: https://journals.rcsi.science/0020-1685/article/view/158198
DOI: https://doi.org/10.1134/S0020168517040124
ID: 158198

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
补充文件
统计

详细

A model is proposed for calculating the composition of GaAs_xP_1–x solid solutions, based on the iterative determination of the equilibrium partial pressures of the pyrolysis products of the starting reagents, followed by calculation of the composition of the solid solution in an adsorption–desorption model. The proposed model ensures good agreement between calculation results and experimental data.