Temperature Dependence of Electrical Resistance of Graphene Oxide


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

The temperature dependence of the electrical resistance of graphene oxide upon continuous heating and cooling under argon in the temperature range of 300–550 K and the Raman scattering spectra are studied. In the range 300–370 K, the resistance is constant during the cooling process and is thermostable under subsequent heating. The temperature dependence of the resistance in the 370–550 K range varies according to the activation law. The decrease in resistance with increasing temperature is associated with the removal of functional oxygen-containing groups, which is confirmed by the Raman spectra.

Авторлар туралы

A. Babaev

Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences

Хат алмасуға жауапты Автор.
Email: babaev-arif@mail.ru
Ресей, Makhachkala, Dagestan, 367003

M. Zobov

Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences

Email: babaev-arif@mail.ru
Ресей, Makhachkala, Dagestan, 367003

D. Kornilov

AkKoLab

Email: babaev-arif@mail.ru
Ресей, Moscow, 129110

S. Tkachev

AkKoLab

Email: babaev-arif@mail.ru
Ресей, Moscow, 129110

E. Terukov

Ioffe Institute

Email: babaev-arif@mail.ru
Ресей, St. Petersburg, 194021

V. Levitskii

Scientific Center for Thin-Film Technologies in Energy

Email: babaev-arif@mail.ru
Ресей, St. Petersburg, 194021

Қосымша файлдар

Қосымша файлдар
Әрекет
1. JATS XML

© Pleiades Publishing, Inc., 2019