Temperature Dependence of Electrical Resistance of Graphene Oxide


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The temperature dependence of the electrical resistance of graphene oxide upon continuous heating and cooling under argon in the temperature range of 300–550 K and the Raman scattering spectra are studied. In the range 300–370 K, the resistance is constant during the cooling process and is thermostable under subsequent heating. The temperature dependence of the resistance in the 370–550 K range varies according to the activation law. The decrease in resistance with increasing temperature is associated with the removal of functional oxygen-containing groups, which is confirmed by the Raman spectra.

作者简介

A. Babaev

Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences

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Email: babaev-arif@mail.ru
俄罗斯联邦, Makhachkala, Dagestan, 367003

M. Zobov

Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences

Email: babaev-arif@mail.ru
俄罗斯联邦, Makhachkala, Dagestan, 367003

D. Kornilov

AkKoLab

Email: babaev-arif@mail.ru
俄罗斯联邦, Moscow, 129110

S. Tkachev

AkKoLab

Email: babaev-arif@mail.ru
俄罗斯联邦, Moscow, 129110

E. Terukov

Ioffe Institute

Email: babaev-arif@mail.ru
俄罗斯联邦, St. Petersburg, 194021

V. Levitskii

Scientific Center for Thin-Film Technologies in Energy

Email: babaev-arif@mail.ru
俄罗斯联邦, St. Petersburg, 194021

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