Temperature Dependence of Electrical Resistance of Graphene Oxide
- 作者: Babaev A.A.1, Zobov M.E.1, Kornilov D.Y.2, Tkachev S.V.2, Terukov E.I.3, Levitskii V.S.4
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隶属关系:
- Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
- AkKoLab
- Ioffe Institute
- Scientific Center for Thin-Film Technologies in Energy
- 期: 卷 57, 编号 2 (2019)
- 页面: 198-202
- 栏目: Thermophysical Properties of Materials
- URL: https://journals.rcsi.science/0018-151X/article/view/157944
- DOI: https://doi.org/10.1134/S0018151X19020019
- ID: 157944
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详细
The temperature dependence of the electrical resistance of graphene oxide upon continuous heating and cooling under argon in the temperature range of 300–550 K and the Raman scattering spectra are studied. In the range 300–370 K, the resistance is constant during the cooling process and is thermostable under subsequent heating. The temperature dependence of the resistance in the 370–550 K range varies according to the activation law. The decrease in resistance with increasing temperature is associated with the removal of functional oxygen-containing groups, which is confirmed by the Raman spectra.
作者简介
A. Babaev
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: babaev-arif@mail.ru
俄罗斯联邦, Makhachkala, Dagestan, 367003
M. Zobov
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
Email: babaev-arif@mail.ru
俄罗斯联邦, Makhachkala, Dagestan, 367003
D. Kornilov
AkKoLab
Email: babaev-arif@mail.ru
俄罗斯联邦, Moscow, 129110
S. Tkachev
AkKoLab
Email: babaev-arif@mail.ru
俄罗斯联邦, Moscow, 129110
E. Terukov
Ioffe Institute
Email: babaev-arif@mail.ru
俄罗斯联邦, St. Petersburg, 194021
V. Levitskii
Scientific Center for Thin-Film Technologies in Energy
Email: babaev-arif@mail.ru
俄罗斯联邦, St. Petersburg, 194021
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