Temperature Dependence of Electrical Resistance of Graphene Oxide

Abstract

The temperature dependence of the electrical resistance of graphene oxide upon continuous heating and cooling under argon in the temperature range of 300–550 K and the Raman scattering spectra are studied. In the range 300–370 K, the resistance is constant during the cooling process and is thermostable under subsequent heating. The temperature dependence of the resistance in the 370–550 K range varies according to the activation law. The decrease in resistance with increasing temperature is associated with the removal of functional oxygen-containing groups, which is confirmed by the Raman spectra.