The role of the etchant ion in the formation and growth of pores in silicon during its etching in hydrofluoric acid solutions
- 作者: Abramova E.1, Khort A.1, Tsygankov V.1, Yakovenko A.1, Shvets V.1
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隶属关系:
- Lomonosov State Academy of Fine Chemical Technology
- 期: 卷 467, 编号 1 (2016)
- 页面: 61-63
- 栏目: Chemistry
- URL: https://journals.rcsi.science/0012-5008/article/view/153585
- DOI: https://doi.org/10.1134/S0012500816030010
- ID: 153585
如何引用文章
详细
The role of the etchant ion (HF2)– in the formation of pores in silicon during its etching in hydrofluoric acid solutions has been elucidated. The pore shape, size, and orientation in (100) and (111) silicon substrates have been explained by specific features of the etchant ion (HF2)–.
作者简介
E. Abramova
Lomonosov State Academy of Fine Chemical Technology
编辑信件的主要联系方式.
Email: anavenko@yandex.ru
俄罗斯联邦, pr. Vernadskogo 86, Moscow, 119571
A. Khort
Lomonosov State Academy of Fine Chemical Technology
Email: anavenko@yandex.ru
俄罗斯联邦, pr. Vernadskogo 86, Moscow, 119571
V. Tsygankov
Lomonosov State Academy of Fine Chemical Technology
Email: anavenko@yandex.ru
俄罗斯联邦, pr. Vernadskogo 86, Moscow, 119571
A. Yakovenko
Lomonosov State Academy of Fine Chemical Technology
Email: anavenko@yandex.ru
俄罗斯联邦, pr. Vernadskogo 86, Moscow, 119571
V. Shvets
Lomonosov State Academy of Fine Chemical Technology
Email: anavenko@yandex.ru
俄罗斯联邦, pr. Vernadskogo 86, Moscow, 119571