The role of the etchant ion in the formation and growth of pores in silicon during its etching in hydrofluoric acid solutions
- Authors: Abramova E.N.1, Khort A.M.1, Tsygankov V.N.1, Yakovenko A.G.1, Shvets V.I.1
-
Affiliations:
- Lomonosov State Academy of Fine Chemical Technology
- Issue: Vol 467, No 1 (2016)
- Pages: 61-63
- Section: Chemistry
- URL: https://journals.rcsi.science/0012-5008/article/view/153585
- DOI: https://doi.org/10.1134/S0012500816030010
- ID: 153585
Cite item
Abstract
The role of the etchant ion (HF2)– in the formation of pores in silicon during its etching in hydrofluoric acid solutions has been elucidated. The pore shape, size, and orientation in (100) and (111) silicon substrates have been explained by specific features of the etchant ion (HF2)–.
About the authors
E. N. Abramova
Lomonosov State Academy of Fine Chemical Technology
Author for correspondence.
Email: anavenko@yandex.ru
Russian Federation, pr. Vernadskogo 86, Moscow, 119571
A. M. Khort
Lomonosov State Academy of Fine Chemical Technology
Email: anavenko@yandex.ru
Russian Federation, pr. Vernadskogo 86, Moscow, 119571
V. N. Tsygankov
Lomonosov State Academy of Fine Chemical Technology
Email: anavenko@yandex.ru
Russian Federation, pr. Vernadskogo 86, Moscow, 119571
A. G. Yakovenko
Lomonosov State Academy of Fine Chemical Technology
Email: anavenko@yandex.ru
Russian Federation, pr. Vernadskogo 86, Moscow, 119571
V. I. Shvets
Lomonosov State Academy of Fine Chemical Technology
Email: anavenko@yandex.ru
Russian Federation, pr. Vernadskogo 86, Moscow, 119571