The role of the etchant ion in the formation and growth of pores in silicon during its etching in hydrofluoric acid solutions

E. N. Abramova; A. M. Khort; V. N. Tsygankov; A. G. Yakovenko; V. I. Shvets

doi:10.1134/S0012500816030010

The role of the etchant ion in the formation and growth of pores in silicon during its etching in hydrofluoric acid solutions

Авторы: Abramova E.N.¹, Khort A.M.¹, Tsygankov V.N.¹, Yakovenko A.G.¹, Shvets V.I.¹
Учреждения:
1. Lomonosov State Academy of Fine Chemical Technology
Выпуск: Том 467, № 1 (2016)
Страницы: 61-63
Раздел: Chemistry
URL: https://journals.rcsi.science/0012-5008/article/view/153585
DOI: https://doi.org/10.1134/S0012500816030010
ID: 153585

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The role of the etchant ion (HF₂)^– in the formation of pores in silicon during its etching in hydrofluoric acid solutions has been elucidated. The pore shape, size, and orientation in (100) and (111) silicon substrates have been explained by specific features of the etchant ion (HF₂)^–.