The role of the etchant ion in the formation and growth of pores in silicon during its etching in hydrofluoric acid solutions


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Resumo

The role of the etchant ion (HF2) in the formation of pores in silicon during its etching in hydrofluoric acid solutions has been elucidated. The pore shape, size, and orientation in (100) and (111) silicon substrates have been explained by specific features of the etchant ion (HF2).

Sobre autores

E. Abramova

Lomonosov State Academy of Fine Chemical Technology

Autor responsável pela correspondência
Email: anavenko@yandex.ru
Rússia, pr. Vernadskogo 86, Moscow, 119571

A. Khort

Lomonosov State Academy of Fine Chemical Technology

Email: anavenko@yandex.ru
Rússia, pr. Vernadskogo 86, Moscow, 119571

V. Tsygankov

Lomonosov State Academy of Fine Chemical Technology

Email: anavenko@yandex.ru
Rússia, pr. Vernadskogo 86, Moscow, 119571

A. Yakovenko

Lomonosov State Academy of Fine Chemical Technology

Email: anavenko@yandex.ru
Rússia, pr. Vernadskogo 86, Moscow, 119571

V. Shvets

Lomonosov State Academy of Fine Chemical Technology

Email: anavenko@yandex.ru
Rússia, pr. Vernadskogo 86, Moscow, 119571

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