Мақаланы E-mail арқылы жіберу Morphology and Photoelectric Characteristics of the Thin-Film Polycrystalline Structure SnO2-CdS/Cu(InGa)Se2-Ag
- Авторлар: Kobulov R.R.1, Matchanov N.A.1, Ataboyev O.K.1
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Мекемелер:
- International Solar Energy Institute
- Шығарылым: Том 54, № 2 (2018)
- Беттер: 91-94
- Бөлім: Direct Conversion of Solar Energy to Electricity
- URL: https://journals.rcsi.science/0003-701X/article/view/149395
- DOI: https://doi.org/10.3103/S0003701X18020068
- ID: 149395
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Аннотация
The surface morphology and photoelectric characteristics of a thin-film SnO2-CdS/Cu(InGa)Se2-Ag heterostructure have been studied. The chemical and phase composition of the Cu(InGa)Se2 film in the synthesized structure have been investigated. The current transfer mechanism has been studied, and the main parameters of the semiconductor material have been determined. It has been found that there are no oppositely connected barriers in the heterostructure.
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Авторлар туралы
R. Kobulov
International Solar Energy Institute
Хат алмасуға жауапты Автор.
Email: krr1982@bk.ru
Өзбекстан, Tashkent
N. Matchanov
International Solar Energy Institute
Email: krr1982@bk.ru
Өзбекстан, Tashkent
O. Ataboyev
International Solar Energy Institute
Email: krr1982@bk.ru
Өзбекстан, Tashkent
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