Morphology and Photoelectric Characteristics of the Thin-Film Polycrystalline Structure SnO2-CdS/Cu(InGa)Se2-Ag
- 作者: Kobulov R.R.1, Matchanov N.A.1, Ataboyev O.K.1
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隶属关系:
- International Solar Energy Institute
- 期: 卷 54, 编号 2 (2018)
- 页面: 91-94
- 栏目: Direct Conversion of Solar Energy to Electricity
- URL: https://journals.rcsi.science/0003-701X/article/view/149395
- DOI: https://doi.org/10.3103/S0003701X18020068
- ID: 149395
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详细
The surface morphology and photoelectric characteristics of a thin-film SnO2-CdS/Cu(InGa)Se2-Ag heterostructure have been studied. The chemical and phase composition of the Cu(InGa)Se2 film in the synthesized structure have been investigated. The current transfer mechanism has been studied, and the main parameters of the semiconductor material have been determined. It has been found that there are no oppositely connected barriers in the heterostructure.
作者简介
R. Kobulov
International Solar Energy Institute
编辑信件的主要联系方式.
Email: krr1982@bk.ru
乌兹别克斯坦, Tashkent
N. Matchanov
International Solar Energy Institute
Email: krr1982@bk.ru
乌兹别克斯坦, Tashkent
O. Ataboyev
International Solar Energy Institute
Email: krr1982@bk.ru
乌兹别克斯坦, Tashkent
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