Morphology and Photoelectric Characteristics of the Thin-Film Polycrystalline Structure SnO2-CdS/Cu(InGa)Se2-Ag


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The surface morphology and photoelectric characteristics of a thin-film SnO2-CdS/Cu(InGa)Se2-Ag heterostructure have been studied. The chemical and phase composition of the Cu(InGa)Se2 film in the synthesized structure have been investigated. The current transfer mechanism has been studied, and the main parameters of the semiconductor material have been determined. It has been found that there are no oppositely connected barriers in the heterostructure.

作者简介

R. Kobulov

International Solar Energy Institute

编辑信件的主要联系方式.
Email: krr1982@bk.ru
乌兹别克斯坦, Tashkent

N. Matchanov

International Solar Energy Institute

Email: krr1982@bk.ru
乌兹别克斯坦, Tashkent

O. Ataboyev

International Solar Energy Institute

Email: krr1982@bk.ru
乌兹别克斯坦, Tashkent

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