Morphology and Photoelectric Characteristics of the Thin-Film Polycrystalline Structure SnO2-CdS/Cu(InGa)Se2-Ag
- Авторы: Kobulov R.R.1, Matchanov N.A.1, Ataboyev O.K.1
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Учреждения:
- International Solar Energy Institute
- Выпуск: Том 54, № 2 (2018)
- Страницы: 91-94
- Раздел: Direct Conversion of Solar Energy to Electricity
- URL: https://journals.rcsi.science/0003-701X/article/view/149395
- DOI: https://doi.org/10.3103/S0003701X18020068
- ID: 149395
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Аннотация
The surface morphology and photoelectric characteristics of a thin-film SnO2-CdS/Cu(InGa)Se2-Ag heterostructure have been studied. The chemical and phase composition of the Cu(InGa)Se2 film in the synthesized structure have been investigated. The current transfer mechanism has been studied, and the main parameters of the semiconductor material have been determined. It has been found that there are no oppositely connected barriers in the heterostructure.
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Об авторах
R. Kobulov
International Solar Energy Institute
Автор, ответственный за переписку.
Email: krr1982@bk.ru
Узбекистан, Tashkent
N. Matchanov
International Solar Energy Institute
Email: krr1982@bk.ru
Узбекистан, Tashkent
O. Ataboyev
International Solar Energy Institute
Email: krr1982@bk.ru
Узбекистан, Tashkent
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