Structural and Optoelectron Properties of Hybrid Perovskite Crystals
- 作者: Semenova O.I.1, Abramkin D.S.1, Derebezov I.A.1, Shmakov A.N.2, Gaisler A.V.1, Gaisler V.A.1
- 
							隶属关系: 
							- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Boreskov Institute of Catalysis, Siberian Branch
 
- 期: 卷 55, 编号 5 (2019)
- 页面: 441-446
- 栏目: Physical and Engineering Fundamentals of Microelectronics and Optoelectronics
- URL: https://journals.rcsi.science/8756-6990/article/view/212841
- DOI: https://doi.org/10.3103/S8756699019050042
- ID: 212841
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The structure and photoluminescence of CH3NH3PbI3 (lead triiodide methylammonium) synthesized perovskite crystals are investigated in a wide temperature range. As temperature rises to 130–140 K, there is a junction from an orthorhombic to tetragonal crystal lattice with a change in the bandwidth. An increase in the stationary photoluminescence intensity at room temperature under the influence of exciting emission is revealed. A model explaining the observed growth of photoluminescence is proposed.
作者简介
O. Semenova
Rzhanov Institute of Semiconductor Physics, Siberian Branch
							编辑信件的主要联系方式.
							Email: oisem@isp.nsc.ru
				                					                																			                												                	俄罗斯联邦, 							pr. Akademika Lavrentyeva 13, Novosibirsk, 630090						
D. Abramkin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
														Email: oisem@isp.nsc.ru
				                					                																			                												                	俄罗斯联邦, 							pr. Akademika Lavrentyeva 13, Novosibirsk, 630090						
I. Derebezov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
														Email: oisem@isp.nsc.ru
				                					                																			                												                	俄罗斯联邦, 							pr. Akademika Lavrentyeva 13, Novosibirsk, 630090						
A. Shmakov
Boreskov Institute of Catalysis, Siberian Branch
														Email: oisem@isp.nsc.ru
				                					                																			                												                	俄罗斯联邦, 							pr. Akademika Lavrentyeva 5, Novosibirsk, 630090						
A. Gaisler
Rzhanov Institute of Semiconductor Physics, Siberian Branch
														Email: oisem@isp.nsc.ru
				                					                																			                												                	俄罗斯联邦, 							pr. Akademika Lavrentyeva 13, Novosibirsk, 630090						
V. Gaisler
Rzhanov Institute of Semiconductor Physics, Siberian Branch
														Email: oisem@isp.nsc.ru
				                					                																			                												                	俄罗斯联邦, 							pr. Akademika Lavrentyeva 13, Novosibirsk, 630090						
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