Raman studies of phase and atomic compositions of GeSi nanosystems after pulsed annealing


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The phase and elemental compositions of GeSi heterostructures deposited on non-refractory substrates are analyzed by using a non-destructive express technique, i.e., the Raman spectroscopy. It is shown that application of pulsed laser annealing allows one to vary the elemental composition and size of nanocrystals formed from solid alloys of germanium and silicon.

作者简介

A. Dvurechenskii

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: volodin@isp.nsc.ru
俄罗斯联邦, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090

V. Volodin

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

编辑信件的主要联系方式.
Email: volodin@isp.nsc.ru
俄罗斯联邦, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090

G. Krivyakin

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: volodin@isp.nsc.ru
俄罗斯联邦, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

A. Shklyaev

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: volodin@isp.nsc.ru
俄罗斯联邦, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090

S. Kochubei

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: volodin@isp.nsc.ru
俄罗斯联邦, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

I. Neizvestny

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: volodin@isp.nsc.ru
俄罗斯联邦, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

J. Stuchlik

Institute of Physics ASCR, Střešovice

Email: volodin@isp.nsc.ru
捷克共和国, Cukrovarnická 112/10, Praha 6, 16200

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