Raman studies of phase and atomic compositions of GeSi nanosystems after pulsed annealing
- 作者: Dvurechenskii A.V.1,2, Volodin V.A.1,2, Krivyakin G.K.1, Shklyaev A.A.1,2, Kochubei S.A.1, Neizvestny I.G.1, Stuchlik J.3
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Institute of Physics ASCR, Střešovice
- 期: 卷 52, 编号 5 (2016)
- 页面: 496-500
- 栏目: Nanotechnologies in Optics and Electronics
- URL: https://journals.rcsi.science/8756-6990/article/view/212010
- DOI: https://doi.org/10.3103/S8756699016050113
- ID: 212010
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详细
The phase and elemental compositions of GeSi heterostructures deposited on non-refractory substrates are analyzed by using a non-destructive express technique, i.e., the Raman spectroscopy. It is shown that application of pulsed laser annealing allows one to vary the elemental composition and size of nanocrystals formed from solid alloys of germanium and silicon.
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作者简介
A. Dvurechenskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: volodin@isp.nsc.ru
俄罗斯联邦, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
V. Volodin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
编辑信件的主要联系方式.
Email: volodin@isp.nsc.ru
俄罗斯联邦, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
G. Krivyakin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: volodin@isp.nsc.ru
俄罗斯联邦, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
A. Shklyaev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: volodin@isp.nsc.ru
俄罗斯联邦, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
S. Kochubei
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: volodin@isp.nsc.ru
俄罗斯联邦, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
I. Neizvestny
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: volodin@isp.nsc.ru
俄罗斯联邦, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
J. Stuchlik
Institute of Physics ASCR, Střešovice
Email: volodin@isp.nsc.ru
捷克共和国, Cukrovarnická 112/10, Praha 6, 16200
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