Email this article Raman studies of phase and atomic compositions of GeSi nanosystems after pulsed annealing
- Authors: Dvurechenskii A.V.1,2, Volodin V.A.1,2, Krivyakin G.K.1, Shklyaev A.A.1,2, Kochubei S.A.1, Neizvestny I.G.1, Stuchlik J.3
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Institute of Physics ASCR, Střešovice
- Issue: Vol 52, No 5 (2016)
- Pages: 496-500
- Section: Nanotechnologies in Optics and Electronics
- URL: https://journals.rcsi.science/8756-6990/article/view/212010
- DOI: https://doi.org/10.3103/S8756699016050113
- ID: 212010
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Abstract
The phase and elemental compositions of GeSi heterostructures deposited on non-refractory substrates are analyzed by using a non-destructive express technique, i.e., the Raman spectroscopy. It is shown that application of pulsed laser annealing allows one to vary the elemental composition and size of nanocrystals formed from solid alloys of germanium and silicon.
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About the authors
A. V. Dvurechenskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: volodin@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
V. A. Volodin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Author for correspondence.
Email: volodin@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
G. K. Krivyakin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: volodin@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
A. A. Shklyaev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: volodin@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
S. A. Kochubei
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: volodin@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
I. G. Neizvestny
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: volodin@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
J. Stuchlik
Institute of Physics ASCR, Střešovice
Email: volodin@isp.nsc.ru
Czech Republic, Cukrovarnická 112/10, Praha 6, 16200
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