Influence of the Step Composition Profile on the Formation of Inversion in Cadmium—Mercury—Tellurium Films


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Resumo

Within the framework of the problem of ensuring favorable conditions for normal operation of diode photodetector matrices, the influence of a step composition profile on the formation of inversion in mercury—cadmium—tellurium (MCT) films under the action of a built-in charge Qi of the isolating dielectric is studied. The problem of evaluating the maximum permissible charge Qi still not leading to the formation of inversion in the system is analyzed via the variation of involved problem parameters: the values of the band edge offsets for charge carriers in the MCT, the thickness of the broadband surface MCT layer, the operating temperature of the photodetector, and the doping level of the two-layer MCT film.

Sobre autores

V. Stuchinsky

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Autor responsável pela correspondência
Email: stuchin@isp.nsc.ru
Rússia, pr. Akademika Lavrentyeva 13, Novosibirsk, 630090

A. Vishnyakov

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: stuchin@isp.nsc.ru
Rússia, pr. Akademika Lavrentyeva 13, Novosibirsk, 630090

G. Sidorov

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: stuchin@isp.nsc.ru
Rússia, pr. Akademika Lavrentyeva 13, Novosibirsk, 630090

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