Influence of the Step Composition Profile on the Formation of Inversion in Cadmium—Mercury—Tellurium Films
- 作者: Stuchinsky V.A.1, Vishnyakov A.V.1, Sidorov G.Y.1
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- 期: 卷 55, 编号 5 (2019)
- 页面: 455-461
- 栏目: Physical and Engineering Fundamentals of Microelectronics and Optoelectronics
- URL: https://journals.rcsi.science/8756-6990/article/view/212850
- DOI: https://doi.org/10.3103/S8756699019050066
- ID: 212850
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详细
Within the framework of the problem of ensuring favorable conditions for normal operation of diode photodetector matrices, the influence of a step composition profile on the formation of inversion in mercury—cadmium—tellurium (MCT) films under the action of a built-in charge Qi of the isolating dielectric is studied. The problem of evaluating the maximum permissible charge Qi still not leading to the formation of inversion in the system is analyzed via the variation of involved problem parameters: the values of the band edge offsets for charge carriers in the MCT, the thickness of the broadband surface MCT layer, the operating temperature of the photodetector, and the doping level of the two-layer MCT film.
作者简介
V. Stuchinsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch
编辑信件的主要联系方式.
Email: stuchin@isp.nsc.ru
俄罗斯联邦, pr. Akademika Lavrentyeva 13, Novosibirsk, 630090
A. Vishnyakov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: stuchin@isp.nsc.ru
俄罗斯联邦, pr. Akademika Lavrentyeva 13, Novosibirsk, 630090
G. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: stuchin@isp.nsc.ru
俄罗斯联邦, pr. Akademika Lavrentyeva 13, Novosibirsk, 630090
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