X-ray Diffraction Tomography Using Laboratory Sources for Studying Single Dislocations in a Low Absorbing Silicon Single Crystal

Аннотация

This paper is a continuation of previous studies on the development of X-ray topo-tomography using laboratory equipment. The results on the spatial location of a single polygonal dislocation half-loop in a silicon single crystal were obtained as a result of testing the sensitivity of the X-ray topo-tomo diffractometer. A comparison was made with high-resolution experimental data obtained at the European synchrotron radiation facility (ESRF). The experimental procedure, software, and hardware for 3D reconstruction of the investigated single defect — a polygonal dislocation half-loop — are described.