Superthin Solar Cells Based on AIIIBV/Ge Heterostructures

Abstract

A comparative analysis of the prospects of creating superthin, light-weight, and highly efficient solar cells based on A^IIIB^V/InGaAs and A^IIIB^V/Ge heterostructures is performed. Technological problems and prospects of each variant are discussed. A method of thinning of A^IIIB^V/Ge heterostructures with the use of an effective temporary carrier is proposed. The method allows the process to be performed almost with no risk of heterostructure fracture, thinning of the Ge junction down to several tens of micrometers (or even several micrometers), significant enhancement of the yield of good structures, and also convenient and reliable transfer of thinned solar cells to an arbitrary light and flexible substrate. Such a technology offers a possibility of creating high-efficiency thin and light solar cells for space vehicles on the basis of mass-produced A^IIIB^V/Ge heterostructures.