Introscopy in nano- and mesoscopic physics: Single electronics and quantum ballistics
- Авторлар: Tkachenko V.A.1, Tkachenko O.A.1, Kvon Z.D.1, Latyshev A.V.1, Aseev A.L.1
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Мекемелер:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Шығарылым: Том 52, № 5 (2016)
- Беттер: 518-528
- Бөлім: Nanotechnologies in Optics and Electronics
- URL: https://journals.rcsi.science/8756-6990/article/view/212019
- DOI: https://doi.org/10.3103/S8756699016050149
- ID: 212019
Дәйексөз келтіру
Аннотация
A method is presented to be used in a computational experiment aimed at studying the internal structure of nano- and mesoscopic objects, i.e., conducting subsystems and quantum phenomena in solid submicron objects, which demonstrate an individual behavior of low-temperature resistance.
Негізгі сөздер
Авторлар туралы
V. Tkachenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Хат алмасуға жауапты Автор.
Email: vtkach@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
O. Tkachenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: vtkach@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
Z. Kvon
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: vtkach@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
A. Latyshev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: vtkach@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
A. Aseev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: vtkach@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
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