Introscopy in nano- and mesoscopic physics: Single electronics and quantum ballistics


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Abstract

A method is presented to be used in a computational experiment aimed at studying the internal structure of nano- and mesoscopic objects, i.e., conducting subsystems and quantum phenomena in solid submicron objects, which demonstrate an individual behavior of low-temperature resistance.

About the authors

V. A. Tkachenko

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Author for correspondence.
Email: vtkach@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

O. A. Tkachenko

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: vtkach@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

Z. D. Kvon

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: vtkach@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

A. V. Latyshev

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: vtkach@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

A. L. Aseev

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: vtkach@isp.nsc.ru
Russian Federation, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

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