Dynamics of Growth of the Native Oxide of CdxHg1−xTe
- Авторлар: Sidorov G.Y.1, Shvets V.A.1,2, Sidorov Y.G.1, Varavin V.S.1
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Мекемелер:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Шығарылым: Том 53, № 6 (2017)
- Беттер: 617-624
- Бөлім: Nanotechnologies in Optics and Electronics
- URL: https://journals.rcsi.science/8756-6990/article/view/212300
- DOI: https://doi.org/10.3103/S8756699017060127
- ID: 212300
Дәйексөз келтіру
Аннотация
The growth of the native oxide of the CdxHg1−xTe (MCT) compound is studied by methods of laser and spectral ellipsometry. It is found that a non-absorbing oxide film is formed from the very beginning in the case of MCT oxidation with hydrogen peroxide vapors, whereas oxidation with atmospheric oxygen leads to the formation of absorbing layers on the surface at the first stages of the process. When the oxide film thickness reaches 1–2 nm, the oxidation rate drastically decreases. If MCT samples that were stored for a long time (for years) in air at room temperature are heated at T = 200 °C, the optical thickness of the oxide film decreases.
Негізгі сөздер
Авторлар туралы
G. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: shvets@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
V. Shvets
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Хат алмасуға жауапты Автор.
Email: shvets@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
Yu. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: shvets@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
V. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: shvets@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090
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