Stochastic simulation of electron-hole recombination in two-dimensional and three-dimensional inhomogeneous semiconductors. Part I. Stochastic model and algorithms

Аннотация

This paper describes the stochastic models of electron-hole recombination in inhomogeneous semiconductors in two-dimensional and three-dimensional cases, which were developed on the basis of discrete (cellular automation) and continuous (Monte Carlo method) approaches. The mathematical model of electron-hole recombination, constructed on the basis of a system of spatially inhomogeneous nonlinear integro-differential Smoluchowski equations, is illustrated. The continuous algorithm of the Monte Carlo method and the discrete cellular automation algorithm used for the simulation of particle recombination in semiconductors are shown.