Stochastic simulation of electron-hole recombination in two-dimensional and three-dimensional inhomogeneous semiconductors. Part I. Stochastic model and algorithms
- Authors: Sabelfeld K.K.1, Kireeva A.E.1
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Affiliations:
- Institute of Computational Mathematics and Mathematical Geophysics, Siberian Branch
- Issue: Vol 53, No 1 (2017)
- Pages: 96-102
- Section: Nanotechnologies in Optics and Electronics
- URL: https://journals.rcsi.science/8756-6990/article/view/212084
- DOI: https://doi.org/10.3103/S8756699017010149
- ID: 212084
Cite item
Abstract
This paper describes the stochastic models of electron-hole recombination in inhomogeneous semiconductors in two-dimensional and three-dimensional cases, which were developed on the basis of discrete (cellular automation) and continuous (Monte Carlo method) approaches. The mathematical model of electron-hole recombination, constructed on the basis of a system of spatially inhomogeneous nonlinear integro-differential Smoluchowski equations, is illustrated. The continuous algorithm of the Monte Carlo method and the discrete cellular automation algorithm used for the simulation of particle recombination in semiconductors are shown.
About the authors
K. K. Sabelfeld
Institute of Computational Mathematics and Mathematical Geophysics, Siberian Branch
Author for correspondence.
Email: karl@osmf.sscc.ru
Russian Federation, pr. Akademika Lavrent’ev 6, Novosibirsk, 630090
A. E. Kireeva
Institute of Computational Mathematics and Mathematical Geophysics, Siberian Branch
Email: karl@osmf.sscc.ru
Russian Federation, pr. Akademika Lavrent’ev 6, Novosibirsk, 630090
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