Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

D. S. Abramkin; M. O. Petrushkov; E. A. Emel’yanov; M. A. Putyato; B. R. Semyagin; A. V. Vasev; M. Yu. Esin; I. D. Loshkarev; A. K. Gutakovskii; V. V. Preobrazhenskii; T. S. Shamirzaev

doi:10.3103/S8756699018020103

Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

作者: Abramkin D.S.¹^,2, Petrushkov M.O.¹, Emel’yanov E.A.¹, Putyato M.A.¹, Semyagin B.R.¹, Vasev A.V.¹, Esin M.Y.¹, Loshkarev I.D.¹, Gutakovskii A.K.¹^,2, Preobrazhenskii V.V.¹, Shamirzaev T.S.¹^,2^,3
隶属关系:
1. Rzhanov Institute of Semiconductor Physics, Siberian Branch
2. Novosibirsk State University
3. Ural Federal University
期: 卷 54, 编号 2 (2018)
页面: 181-186
栏目: Physical and Engineering Fundamentals of Microelectronics and Optoelectronics
URL: https://journals.rcsi.science/8756-6990/article/view/212413
DOI: https://doi.org/10.3103/S8756699018020103
ID: 212413

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
补充文件
统计

详细

The influence of dislocation filters based on low-temperature layers (LT) of GaAs and postgrowth annealing on the perfection of GaAs/Si heterostructures is discussed. It is shown that LT-GaAs layers reduce the density of threading dislocations and surface roughness. Post-growth annealing at a temperature of 650 °C reduces the concentration of nonradiative recombination centers in GaAs/Si layers to a level close to the level in GaAs layers grown on a matched substrate.

关键词

epitaxy, low-temperature GaAs, dislocation filter

作者简介

D. Abramkin

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

编辑信件的主要联系方式.
Email: demid@isp.nsc.ru
俄罗斯联邦, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090