Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

D. S. Abramkin; M. O. Petrushkov; E. A. Emel’yanov; M. A. Putyato; B. R. Semyagin; A. V. Vasev; M. Yu. Esin; I. D. Loshkarev; A. K. Gutakovskii; V. V. Preobrazhenskii; T. S. Shamirzaev

doi:10.3103/S8756699018020103

Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

Autores: Abramkin D.S.¹^,2, Petrushkov M.O.¹, Emel’yanov E.A.¹, Putyato M.A.¹, Semyagin B.R.¹, Vasev A.V.¹, Esin M.Y.¹, Loshkarev I.D.¹, Gutakovskii A.K.¹^,2, Preobrazhenskii V.V.¹, Shamirzaev T.S.¹^,2^,3
Afiliações:
1. Rzhanov Institute of Semiconductor Physics, Siberian Branch
2. Novosibirsk State University
3. Ural Federal University
Edição: Volume 54, Nº 2 (2018)
Páginas: 181-186
Seção: Physical and Engineering Fundamentals of Microelectronics and Optoelectronics
URL: https://journals.rcsi.science/8756-6990/article/view/212413
DOI: https://doi.org/10.3103/S8756699018020103
ID: 212413

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Resumo

The influence of dislocation filters based on low-temperature layers (LT) of GaAs and postgrowth annealing on the perfection of GaAs/Si heterostructures is discussed. It is shown that LT-GaAs layers reduce the density of threading dislocations and surface roughness. Post-growth annealing at a temperature of 650 °C reduces the concentration of nonradiative recombination centers in GaAs/Si layers to a level close to the level in GaAs layers grown on a matched substrate.

Palavras-chave

epitaxy, low-temperature GaAs, dislocation filter

Sobre autores

D. Abramkin

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

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Email: demid@isp.nsc.ru
Rússia, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090