Email this article Real-Time Control of Nonflatness of Components of Infrared-Range Flip-Chip Photodetectors
- Authors: Novoselov A.R.1, Aldokhin P.A.1, Matochkin A.E.2, Dobrovolskii P.P.1, Shatunov K.P.1
-
Affiliations:
- Design and Technology Institute of Applied Microelectronics, Novosibirsk Department of the Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Institute of Automation and Electrometry, Siberian Branch
- Issue: Vol 55, No 2 (2019)
- Pages: 162-171
- Section: Physical and Engineering Fundamentals of Microelectronics and Optoelectronics
- URL: https://journals.rcsi.science/8756-6990/article/view/212713
- DOI: https://doi.org/10.3103/S8756699019020080
- ID: 212713
Cite item
Open Access
Access granted
Subscription Access
Abstract
A possibility of using the autocollimation and interference methods for real-time nondestructive check of the wafer nonflatness of photodetector arrays that are sensitive in the infrared range and are fabricated by the flip-chip technology is considered. These methods allow monitoring the wafer nonflatness and the maximum deflections. These methods are applied in the present study to measure the wafer nonflatness of fragments of silicon slices and arrays of photosensitive elements on GaAs substrates, as well as the wafer nonflatness of photodetectors at different stages of fracture and in the course of thermal cycling.
About the authors
A. R. Novoselov
Design and Technology Institute of Applied Microelectronics, Novosibirsk Department of the Rzhanov Institute of Semiconductor Physics, Siberian Branch
Author for correspondence.
Email: novoselov@oesd.ru
Russian Federation, pr. Akademika Lavrent’eva 2/1, Novosibirsk, 630090
P. A. Aldokhin
Design and Technology Institute of Applied Microelectronics, Novosibirsk Department of the Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: matochkin@iae.nsk.su
Russian Federation, pr. Akademika Lavrent’eva 2/1, Novosibirsk, 630090
A. E. Matochkin
Institute of Automation and Electrometry, Siberian Branch
Author for correspondence.
Email: matochkin@iae.nsk.su
Russian Federation, pr. Akademika Koptyuga 1, Novosibirsk, 630090
P. P. Dobrovolskii
Design and Technology Institute of Applied Microelectronics, Novosibirsk Department of the Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: matochkin@iae.nsk.su
Russian Federation, pr. Akademika Lavrent’eva 2/1, Novosibirsk, 630090
K. P. Shatunov
Design and Technology Institute of Applied Microelectronics, Novosibirsk Department of the Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: matochkin@iae.nsk.su
Russian Federation, pr. Akademika Lavrent’eva 2/1, Novosibirsk, 630090
Supplementary files
