Formation of Thick High-Aspect-Ratio Resistive Masks by the Contact Photolithography Method


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Resumo

A method of fabrication of thick (~100 μm and more) resistive masks is described. These masks can be used for solving various engineering problems, e.g., for fabricating x-ray-absorbing topological patterns for LIGA masks, stamp microrelief, cast moulds, etc. Specific features of the contact photolithography method, which is used to design and fabricate the research device, are described. A source of exposure radiation in this device is a light-emitting diode. A possibility of obtaining individual elements of the resistive mask (in particular, with the lateral size ~5 μm, height of ~70 μm, and aspect ratio of ~14) and also the titanium stamp microrelief (with the height up to ~40 μm) generated by means of reactive ion-beam etching through the resistive mask, is experimentally demonstrated.

Sobre autores

A. Gentselev

Budker Institute of Nuclear Physics, Siberian Branch

Autor responsável pela correspondência
Email: A.N.Gentselev@inp.nsk.su
Rússia, pr. Akademika Lavrent’eva 11, Novosibirsk, 630090

F. Dul’tsev

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: A.N.Gentselev@inp.nsk.su
Rússia, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090

V. Kondrat’ev

Budker Institute of Nuclear Physics, Siberian Branch

Email: A.N.Gentselev@inp.nsk.su
Rússia, pr. Akademika Lavrent’eva 11, Novosibirsk, 630090

A. Lemzyakov

Budker Institute of Nuclear Physics, Siberian Branch

Email: A.N.Gentselev@inp.nsk.su
Rússia, pr. Akademika Lavrent’eva 11, Novosibirsk, 630090

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