Formation of Thick High-Aspect-Ratio Resistive Masks by the Contact Photolithography Method

Аннотация

A method of fabrication of thick (~100 μm and more) resistive masks is described. These masks can be used for solving various engineering problems, e.g., for fabricating x-ray-absorbing topological patterns for LIGA masks, stamp microrelief, cast moulds, etc. Specific features of the contact photolithography method, which is used to design and fabricate the research device, are described. A source of exposure radiation in this device is a light-emitting diode. A possibility of obtaining individual elements of the resistive mask (in particular, with the lateral size ~5 μm, height of ~70 μm, and aspect ratio of ~14) and also the titanium stamp microrelief (with the height up to ~40 μm) generated by means of reactive ion-beam etching through the resistive mask, is experimentally demonstrated.