Inversion of surface conductivity type in correlated topological insulator SmB6

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Abstract

The potential to control the type of surface conductivity in the correlated topological insulator SmB6 was demonstrated for the first time. The transition to p-type surface conductivity with the Hall effect sign inversion at helium temperatures was achieved by cleaning the SmB6 faces formed by the (110) surfaces with the help of argon ion sputtering with an average energy of 500 eV. The crossover in the surface conductivity type with a dominant contribution from surface holes (having mobility up to 60 cm2V−1s−1 at 2 K) is associated with both the removal of carbon from the surface of SmB6 and its passivation by oxygen, and with the generation of defects in the near-surface layer initiated by ion bombardment. The discovered effect opens up possibilities for modifying the parameters of surface electron transport in the correlated topological insulator SmB6 by means of the controlled injection of defects or due to the field effect.

About the authors

V. V Glushkov

Prokhorov General Physics Institute of the Russian Academy of Sciences

Email: glushkov@lt.gpi.ru
Moscow, Russian Federation

A. D Bozhko

Prokhorov General Physics Institute of the Russian Academy of Sciences

Email: glushkov@lt.gpi.ru
Moscow, Russian Federation

V. S Zhurkin

Prokhorov General Physics Institute of the Russian Academy of Sciences

Email: glushkov@lt.gpi.ru
Moscow, Russian Federation

V. M Shevlyuga

Prokhorov General Physics Institute of the Russian Academy of Sciences

Email: glushkov@lt.gpi.ru
Moscow, Russian Federation

B. V Andryushechkin

Prokhorov General Physics Institute of the Russian Academy of Sciences

Author for correspondence.
Email: glushkov@lt.gpi.ru
Moscow, Russian Federation

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