Simulation the response of graphene to an external electric field using the exact tight-binding model
- Authors: Panferov A.D.1, Novikov N.A.1, Ulyanova A.A.1
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Affiliations:
- Saratov State University
- Issue: Vol 15, No 3 (2024)
- Pages: 3-22
- Section: Articles
- URL: https://journals.rcsi.science/2079-3316/article/view/299204
- DOI: https://doi.org/10.25209/2079-3316-2024-15-3-3-22
- ID: 299204
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Abstract
About the authors
Anatolii Dmitrievich Panferov
Saratov State University
Email: panferovad@sgu.ru
Ph.D., Deputy Head of DITD at N.G. Chernyshevsky Saratov State University. Scientific interests: high-performance computing, parallel programming, numerical solution of quantum kinetic equations, modeling of processes of vacuum particle birth in QED, generation of carriers in semiconductors including slotless ones, processes at early stages of relativistic nuclei collision.
Nikolay Andreevich Novikov
Saratov State University
Email: n_nik1997@mail.ru
Anastasiya Alekseevna Ulyanova
Saratov State University
Email: ulyanova.nastiya@yandex.ru
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