Materials for Electronics

Шығарылым	Атауы	Файл
Том 10, № 2 (2019)	Epitaxial Growth of Iron and Indium Oxide Thin Films on Sapphire R-Plane with a Regular Relief	(Eng)
Muslimov A., Kanevski V.
Том 9, № 2 (2018)	Properties of La–Sr Manganites with Combined Substitution of Different Valence Ions for Strontium and Manganese	(Eng)
Karpasyuk V., Badelin A., Datskaya Z., Merkulov D., Estemirova S.
Том 9, № 2 (2018)	Specific Features of the Growth, Structure, and Main Physicochemical Properties of FeGa₂Se₄ Single Crystals	(Eng)
Pauliukavets S., Bychek I., Patapovich M.
Том 8, № 5 (2017)	Synthesis and photocatalytic properties of mesoporous tantalum oxynitride	(Eng)
Orlov V., Sedneva T.
Том 7, № 5 (2016)	Effect of charge mixture preparation technology on the physicochemical and optical properties of LiNbO₃:Mg crystals	(Eng)
Palatnikov M., Biryukova I., Makarova O., Sidorov N., Teplyakona N., Masloboeva S., Efremov V.
Том 7, № 5 (2016)	Aging of rapidly solidified eutectic alloys Sn–Bi, Sn–Pb, and Bi–Cd	(Eng)
Gusakova O., Shepelevich V., Scherbachenko L.
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