Simulation of the Electron-Phonon Interaction in Silicon

Abstract

The processes of charge transfer in semiconductors are considered. A model is constructed based on the quantum kinetic equations for the distribution functions of conduction electrons and holes of the valence band in the phase space of coordinates and quasi-momenta. Scattering of charge carriers is modeled by the statistical particle method. The basic processes of electron scattering by lattice defects are considered. The calculations of the electron drift velocity in pure and doped silicon are presented.