Simulation of the Electron-Phonon Interaction in Silicon
- 作者: Berezin A.1, Volkov Y.1, Markov M.1, Tarakanov I.1
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隶属关系:
- Keldysh Institute of Applied Mathematics, Russian Academy of Sciences
- 期: 卷 11, 编号 4 (2019)
- 页面: 542-550
- 栏目: Article
- URL: https://journals.rcsi.science/2070-0482/article/view/203381
- DOI: https://doi.org/10.1134/S2070048219040057
- ID: 203381
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详细
The processes of charge transfer in semiconductors are considered. A model is constructed based on the quantum kinetic equations for the distribution functions of conduction electrons and holes of the valence band in the phase space of coordinates and quasi-momenta. Scattering of charge carriers is modeled by the statistical particle method. The basic processes of electron scattering by lattice defects are considered. The calculations of the electron drift velocity in pure and doped silicon are presented.
作者简介
A. Berezin
Keldysh Institute of Applied Mathematics, Russian Academy of Sciences
编辑信件的主要联系方式.
Email: liu_roach@mail.ru
俄罗斯联邦, Moscow
Yu. Volkov
Keldysh Institute of Applied Mathematics, Russian Academy of Sciences
Email: liu_roach@mail.ru
俄罗斯联邦, Moscow
M. Markov
Keldysh Institute of Applied Mathematics, Russian Academy of Sciences
Email: liu_roach@mail.ru
俄罗斯联邦, Moscow
I. Tarakanov
Keldysh Institute of Applied Mathematics, Russian Academy of Sciences
Email: liu_roach@mail.ru
俄罗斯联邦, Moscow