Simulation of the Electron-Phonon Interaction in Silicon
- Authors: Berezin A.V.1, Volkov Y.A.1, Markov M.B.1, Tarakanov I.A.1
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Affiliations:
- Keldysh Institute of Applied Mathematics, Russian Academy of Sciences
- Issue: Vol 11, No 4 (2019)
- Pages: 542-550
- Section: Article
- URL: https://journals.rcsi.science/2070-0482/article/view/203381
- DOI: https://doi.org/10.1134/S2070048219040057
- ID: 203381
Cite item
Abstract
The processes of charge transfer in semiconductors are considered. A model is constructed based on the quantum kinetic equations for the distribution functions of conduction electrons and holes of the valence band in the phase space of coordinates and quasi-momenta. Scattering of charge carriers is modeled by the statistical particle method. The basic processes of electron scattering by lattice defects are considered. The calculations of the electron drift velocity in pure and doped silicon are presented.
About the authors
A. V. Berezin
Keldysh Institute of Applied Mathematics, Russian Academy of Sciences
Author for correspondence.
Email: liu_roach@mail.ru
Russian Federation, Moscow
Yu. A. Volkov
Keldysh Institute of Applied Mathematics, Russian Academy of Sciences
Email: liu_roach@mail.ru
Russian Federation, Moscow
M. B. Markov
Keldysh Institute of Applied Mathematics, Russian Academy of Sciences
Email: liu_roach@mail.ru
Russian Federation, Moscow
I. A. Tarakanov
Keldysh Institute of Applied Mathematics, Russian Academy of Sciences
Email: liu_roach@mail.ru
Russian Federation, Moscow