Absorption of Radiation by ITO Semiconductor Nanoparticles in Plasmon Resonance Region


Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

The radiation absorption cross section of indium–tin oxide (ITO) semiconductor nanoparticles of various sizes placed in various media is calculated in the region of plasmon resonance. The photoabsorption cross sections calculated within the framework of the Mie theory and in the dipole approximation are compared with each other and with the available experimental data. The limits of applicability of the dipole approximation are determined. The prospects of using these nanoparticles as an active material in optical plasmon sensors are assessed.

About the authors

V. A. Astapenko

Moscow Institute of Physics and Technology (State University)

Author for correspondence.
Email: astval@mail.ru
Russian Federation, Dolgoprudny, Moscow oblast, 141701

E. S. Manuilovich

Moscow Institute of Physics and Technology (State University)

Email: astval@mail.ru
Russian Federation, Dolgoprudny, Moscow oblast, 141701

S. V. Sakhno

Moscow Institute of Physics and Technology (State University)

Email: astval@mail.ru
Russian Federation, Dolgoprudny, Moscow oblast, 141701

E. S. Khramov

Moscow Institute of Physics and Technology (State University)

Email: astval@mail.ru
Russian Federation, Dolgoprudny, Moscow oblast, 141701

A. V. Yakovets

Moscow Institute of Physics and Technology (State University)

Email: astval@mail.ru
Russian Federation, Dolgoprudny, Moscow oblast, 141701

Supplementary files

Supplementary Files
Action
1. JATS XML

Copyright (c) 2018 Pleiades Publishing, Ltd.