Absorption of Radiation by ITO Semiconductor Nanoparticles in Plasmon Resonance Region
- Authors: Astapenko V.A.1, Manuilovich E.S.1, Sakhno S.V.1, Khramov E.S.1, Yakovets A.V.1
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Affiliations:
- Moscow Institute of Physics and Technology (State University)
- Issue: Vol 12, No 2 (2018)
- Pages: 325-329
- Section: Chemical Physics of Nanomaterials
- URL: https://journals.rcsi.science/1990-7931/article/view/200455
- DOI: https://doi.org/10.1134/S1990793118020033
- ID: 200455
Cite item
Abstract
The radiation absorption cross section of indium–tin oxide (ITO) semiconductor nanoparticles of various sizes placed in various media is calculated in the region of plasmon resonance. The photoabsorption cross sections calculated within the framework of the Mie theory and in the dipole approximation are compared with each other and with the available experimental data. The limits of applicability of the dipole approximation are determined. The prospects of using these nanoparticles as an active material in optical plasmon sensors are assessed.
About the authors
V. A. Astapenko
Moscow Institute of Physics and Technology (State University)
Author for correspondence.
Email: astval@mail.ru
Russian Federation, Dolgoprudny, Moscow oblast, 141701
E. S. Manuilovich
Moscow Institute of Physics and Technology (State University)
Email: astval@mail.ru
Russian Federation, Dolgoprudny, Moscow oblast, 141701
S. V. Sakhno
Moscow Institute of Physics and Technology (State University)
Email: astval@mail.ru
Russian Federation, Dolgoprudny, Moscow oblast, 141701
E. S. Khramov
Moscow Institute of Physics and Technology (State University)
Email: astval@mail.ru
Russian Federation, Dolgoprudny, Moscow oblast, 141701
A. V. Yakovets
Moscow Institute of Physics and Technology (State University)
Email: astval@mail.ru
Russian Federation, Dolgoprudny, Moscow oblast, 141701
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