Absorption of Radiation by ITO Semiconductor Nanoparticles in Plasmon Resonance Region
- Авторлар: Astapenko V.A.1, Manuilovich E.S.1, Sakhno S.V.1, Khramov E.S.1, Yakovets A.V.1
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Мекемелер:
- Moscow Institute of Physics and Technology (State University)
- Шығарылым: Том 12, № 2 (2018)
- Беттер: 325-329
- Бөлім: Chemical Physics of Nanomaterials
- URL: https://journals.rcsi.science/1990-7931/article/view/200455
- DOI: https://doi.org/10.1134/S1990793118020033
- ID: 200455
Дәйексөз келтіру
Аннотация
The radiation absorption cross section of indium–tin oxide (ITO) semiconductor nanoparticles of various sizes placed in various media is calculated in the region of plasmon resonance. The photoabsorption cross sections calculated within the framework of the Mie theory and in the dipole approximation are compared with each other and with the available experimental data. The limits of applicability of the dipole approximation are determined. The prospects of using these nanoparticles as an active material in optical plasmon sensors are assessed.
Негізгі сөздер
Авторлар туралы
V. Astapenko
Moscow Institute of Physics and Technology (State University)
Хат алмасуға жауапты Автор.
Email: astval@mail.ru
Ресей, Dolgoprudny, Moscow oblast, 141701
E. Manuilovich
Moscow Institute of Physics and Technology (State University)
Email: astval@mail.ru
Ресей, Dolgoprudny, Moscow oblast, 141701
S. Sakhno
Moscow Institute of Physics and Technology (State University)
Email: astval@mail.ru
Ресей, Dolgoprudny, Moscow oblast, 141701
E. Khramov
Moscow Institute of Physics and Technology (State University)
Email: astval@mail.ru
Ресей, Dolgoprudny, Moscow oblast, 141701
A. Yakovets
Moscow Institute of Physics and Technology (State University)
Email: astval@mail.ru
Ресей, Dolgoprudny, Moscow oblast, 141701
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