Absorption of Radiation by ITO Semiconductor Nanoparticles in Plasmon Resonance Region


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Аннотация

The radiation absorption cross section of indium–tin oxide (ITO) semiconductor nanoparticles of various sizes placed in various media is calculated in the region of plasmon resonance. The photoabsorption cross sections calculated within the framework of the Mie theory and in the dipole approximation are compared with each other and with the available experimental data. The limits of applicability of the dipole approximation are determined. The prospects of using these nanoparticles as an active material in optical plasmon sensors are assessed.

Авторлар туралы

V. Astapenko

Moscow Institute of Physics and Technology (State University)

Хат алмасуға жауапты Автор.
Email: astval@mail.ru
Ресей, Dolgoprudny, Moscow oblast, 141701

E. Manuilovich

Moscow Institute of Physics and Technology (State University)

Email: astval@mail.ru
Ресей, Dolgoprudny, Moscow oblast, 141701

S. Sakhno

Moscow Institute of Physics and Technology (State University)

Email: astval@mail.ru
Ресей, Dolgoprudny, Moscow oblast, 141701

E. Khramov

Moscow Institute of Physics and Technology (State University)

Email: astval@mail.ru
Ресей, Dolgoprudny, Moscow oblast, 141701

A. Yakovets

Moscow Institute of Physics and Technology (State University)

Email: astval@mail.ru
Ресей, Dolgoprudny, Moscow oblast, 141701

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