Absorption of Radiation by ITO Semiconductor Nanoparticles in Plasmon Resonance Region
- Авторы: Astapenko V.A.1, Manuilovich E.S.1, Sakhno S.V.1, Khramov E.S.1, Yakovets A.V.1
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Учреждения:
- Moscow Institute of Physics and Technology (State University)
- Выпуск: Том 12, № 2 (2018)
- Страницы: 325-329
- Раздел: Chemical Physics of Nanomaterials
- URL: https://journals.rcsi.science/1990-7931/article/view/200455
- DOI: https://doi.org/10.1134/S1990793118020033
- ID: 200455
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Аннотация
The radiation absorption cross section of indium–tin oxide (ITO) semiconductor nanoparticles of various sizes placed in various media is calculated in the region of plasmon resonance. The photoabsorption cross sections calculated within the framework of the Mie theory and in the dipole approximation are compared with each other and with the available experimental data. The limits of applicability of the dipole approximation are determined. The prospects of using these nanoparticles as an active material in optical plasmon sensors are assessed.
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Об авторах
V. Astapenko
Moscow Institute of Physics and Technology (State University)
Автор, ответственный за переписку.
Email: astval@mail.ru
Россия, Dolgoprudny, Moscow oblast, 141701
E. Manuilovich
Moscow Institute of Physics and Technology (State University)
Email: astval@mail.ru
Россия, Dolgoprudny, Moscow oblast, 141701
S. Sakhno
Moscow Institute of Physics and Technology (State University)
Email: astval@mail.ru
Россия, Dolgoprudny, Moscow oblast, 141701
E. Khramov
Moscow Institute of Physics and Technology (State University)
Email: astval@mail.ru
Россия, Dolgoprudny, Moscow oblast, 141701
A. Yakovets
Moscow Institute of Physics and Technology (State University)
Email: astval@mail.ru
Россия, Dolgoprudny, Moscow oblast, 141701
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