Pseudo-diffusion mode of contact melting in the presence of electro-migration
- 作者: Savvin V.S.1,2
-
隶属关系:
- National Research Nuclear University (MEPhI)
- Institute of Nuclear Power Engineering
- 期: 卷 24, 编号 2 (2017)
- 页面: 303-308
- 栏目: Article
- URL: https://journals.rcsi.science/1531-8699/article/view/216946
- DOI: https://doi.org/10.1134/S0869864317020135
- ID: 216946
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详细
The growth rate of the liquid contact layer may be influenced by an electric current at contact melting. Depending on the direction, the electric current speeds up or slows down the liquid layer growth in comparison with the diffusion regime (no-current mode). It is shown that if the current flowing in the "accelerating" direction is decreased inversely proportional to the square root of time, the time law of the liquid layer growth will be identical to the diffusion mode. The proposed pseudo-diffusion mode is implemented for the bismuth-indium system at 75°C. Results of calculations of the mobility and the effective charge of the melt ions are presented.
作者简介
V. Savvin
National Research Nuclear University (MEPhI); Institute of Nuclear Power Engineering
编辑信件的主要联系方式.
Email: savvin-vs@yandex.ru
俄罗斯联邦, Moscow; Obninsk
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