Study of chemical bonds and element composition of silicon oxycarbonitride films by the methods of XP-, IR-, and energy-dispersive spectroscopy

Аннотация

The element composition and chemical bonds of nanocomposite films of hydrogenated silicon oxycarbonitride fabricated through high-frequency plasma-chemical deposition from initial gas mixtures of 1,1,3,3-tetramethyldisilazane with nitrogen and oxygen in the temperature range 373–973 K depending on the synthesis conditions is studied. The effect of changes in the temperature and chemical composition of the initial gas mixtures on the element composition and types of chemical bonds in SiC_xN_yO_z:H films is investigated.