Email this article Study of chemical bonds and element composition of silicon oxycarbonitride films by the methods of XP-, IR-, and energy-dispersive spectroscopy
- Authors: Fainer N.I.1, Plekhanov A.G.1, Asanov I.P.1,2
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Affiliations:
- Nikolaev Institute of Inorganic Chemistry, Siberian Branch
- Novosibirsk National Research State University (Novosibirsk State University)
- Issue: Vol 43, No 5 (2017)
- Pages: 410-416
- Section: Article
- URL: https://journals.rcsi.science/1087-6596/article/view/216151
- DOI: https://doi.org/10.1134/S1087659617050042
- ID: 216151
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Abstract
The element composition and chemical bonds of nanocomposite films of hydrogenated silicon oxycarbonitride fabricated through high-frequency plasma-chemical deposition from initial gas mixtures of 1,1,3,3-tetramethyldisilazane with nitrogen and oxygen in the temperature range 373–973 K depending on the synthesis conditions is studied. The effect of changes in the temperature and chemical composition of the initial gas mixtures on the element composition and types of chemical bonds in SiCxNyOz:H films is investigated.
About the authors
N. I. Fainer
Nikolaev Institute of Inorganic Chemistry, Siberian Branch
Author for correspondence.
Email: nadezhda@niic.nsc.ru
Russian Federation, Novosibirsk, 630090
A. G. Plekhanov
Nikolaev Institute of Inorganic Chemistry, Siberian Branch
Email: nadezhda@niic.nsc.ru
Russian Federation, Novosibirsk, 630090
I. P. Asanov
Nikolaev Institute of Inorganic Chemistry, Siberian Branch; Novosibirsk National Research State University (Novosibirsk State University)
Email: nadezhda@niic.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
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